Photoelectrical properties and the electronic structure of Tl(1-x)In(1-x)Sn(x)Se2 (x = 0, 0.1, 0.2, 0.25) single crystalline alloys.
Identifieur interne : 000476 ( Main/Exploration ); précédent : 000475; suivant : 000477Photoelectrical properties and the electronic structure of Tl(1-x)In(1-x)Sn(x)Se2 (x = 0, 0.1, 0.2, 0.25) single crystalline alloys.
Auteurs : RBID : pubmed:23552559English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Alloys, Indium, Selenium, Thallium, Tin.
- Crystallization, Electrons, Photoelectron Spectroscopy, Temperature.
Abstract
Photoelectrical properties of Tl1-xIn1-xSnxSe2 single crystalline alloys (x = 0, 0.1, 0.2, 0.25) grown using the Bridgman-Stockbarger method were studied. The temperature dependence of electrical and photoconductivity for the Tl1-xIn1-xSnxSe2 single crystals was explored. It has been established that photosensitivity of the Tl1-xIn1-xSnxSe2 single crystals increases with x. The spectral distribution of photocurrent in the wavelength spectral range 400-1000 nm has been investigated at various temperatures. Photoconductivity increases in all the studied crystals with temperature. Therefore, thermal activation of photoconductivity is caused by re-charging of the photoactive centers as the samples are heated. Based on our investigations, a model of center re-charging is proposed that explains the observed phenomena. X-ray photoelectron valence-band spectra for pristine and Ar(+)-ion irradiated surfaces of the Tl1-xIn1-xSnxSe2 single crystals have been measured. These results reveal that the Tl1-xIn1-xSnxSe2 single-crystal surface is sensitive to the Ar(+) ion irradiation that induced structural modification in the top surface layers. Comparison on a common energy scale of the X-ray emission Se Kβ2 bands representing energy distribution of the Se 4p-like states and the X-ray photoelectron valence-band spectra was done.
DOI: 10.1039/c3cp50836f
PubMed: 23552559
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The temperature dependence of electrical and photoconductivity for the Tl1-xIn1-xSnxSe2 single crystals was explored. It has been established that photosensitivity of the Tl1-xIn1-xSnxSe2 single crystals increases with x. The spectral distribution of photocurrent in the wavelength spectral range 400-1000 nm has been investigated at various temperatures. Photoconductivity increases in all the studied crystals with temperature. Therefore, thermal activation of photoconductivity is caused by re-charging of the photoactive centers as the samples are heated. Based on our investigations, a model of center re-charging is proposed that explains the observed phenomena. X-ray photoelectron valence-band spectra for pristine and Ar(+)-ion irradiated surfaces of the Tl1-xIn1-xSnxSe2 single crystals have been measured. These results reveal that the Tl1-xIn1-xSnxSe2 single-crystal surface is sensitive to the Ar(+) ion irradiation that induced structural modification in the top surface layers. Comparison on a common energy scale of the X-ray emission Se Kβ2 bands representing energy distribution of the Se 4p-like states and the X-ray photoelectron valence-band spectra was done.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">23552559</PMID><DateCreated><Year>2013</Year><Month>04</Month><Day>19</Day></DateCreated><DateCompleted><Year>2013</Year><Month>10</Month><Day>17</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1463-9084</ISSN><JournalIssue CitedMedium="Internet"><Volume>15</Volume><Issue>18</Issue><PubDate><Year>2013</Year><Month>May</Month><Day>14</Day></PubDate></JournalIssue><Title>Physical chemistry chemical physics : PCCP</Title><ISOAbbreviation>Phys Chem Chem Phys</ISOAbbreviation></Journal><ArticleTitle>Photoelectrical properties and the electronic structure of Tl(1-x)In(1-x)Sn(x)Se2 (x = 0, 0.1, 0.2, 0.25) single crystalline alloys.</ArticleTitle><Pagination><MedlinePgn>6965-72</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1039/c3cp50836f</ELocationID><Abstract><AbstractText>Photoelectrical properties of Tl1-xIn1-xSnxSe2 single crystalline alloys (x = 0, 0.1, 0.2, 0.25) grown using the Bridgman-Stockbarger method were studied. The temperature dependence of electrical and photoconductivity for the Tl1-xIn1-xSnxSe2 single crystals was explored. It has been established that photosensitivity of the Tl1-xIn1-xSnxSe2 single crystals increases with x. The spectral distribution of photocurrent in the wavelength spectral range 400-1000 nm has been investigated at various temperatures. Photoconductivity increases in all the studied crystals with temperature. Therefore, thermal activation of photoconductivity is caused by re-charging of the photoactive centers as the samples are heated. Based on our investigations, a model of center re-charging is proposed that explains the observed phenomena. X-ray photoelectron valence-band spectra for pristine and Ar(+)-ion irradiated surfaces of the Tl1-xIn1-xSnxSe2 single crystals have been measured. These results reveal that the Tl1-xIn1-xSnxSe2 single-crystal surface is sensitive to the Ar(+) ion irradiation that induced structural modification in the top surface layers. Comparison on a common energy scale of the X-ray emission Se Kβ2 bands representing energy distribution of the Se 4p-like states and the X-ray photoelectron valence-band spectra was done.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Davydyuk</LastName><ForeName>G E</ForeName><Initials>GE</Initials><Affiliation>Department of Solid State Physics, Volyn National University, 13 Voli Ave., Lutsk 43025, Ukraine.</Affiliation></Author><Author ValidYN="Y"><LastName>Khyzhun</LastName><ForeName>O Y</ForeName><Initials>OY</Initials></Author><Author ValidYN="Y"><LastName>Reshak</LastName><ForeName>A H</ForeName><Initials>AH</Initials></Author><Author ValidYN="Y"><LastName>Kamarudin</LastName><ForeName>H</ForeName><Initials>H</Initials></Author><Author ValidYN="Y"><LastName>Myronchuk</LastName><ForeName>G L</ForeName><Initials>GL</Initials></Author><Author ValidYN="Y"><LastName>Danylchuk</LastName><ForeName>S P</ForeName><Initials>SP</Initials></Author><Author ValidYN="Y"><LastName>Fedorchuk</LastName><ForeName>A O</ForeName><Initials>AO</Initials></Author><Author ValidYN="Y"><LastName>Piskach</LastName><ForeName>L V</ForeName><Initials>LV</Initials></Author><Author ValidYN="Y"><LastName>Mozolyuk</LastName><ForeName>M Yu</ForeName><Initials>MY</Initials></Author><Author ValidYN="Y"><LastName>Parasyuk</LastName><ForeName>O V</ForeName><Initials>OV</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2013</Year><Month>04</Month><Day>04</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Phys Chem Chem Phys</MedlineTA><NlmUniqueID>100888160</NlmUniqueID><ISSNLinking>1463-9076</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Alloys</NameOfSubstance></Chemical><Chemical><RegistryNumber>045A6V3VFX</RegistryNumber><NameOfSubstance>Indium</NameOfSubstance></Chemical><Chemical><RegistryNumber>7440-31-5</RegistryNumber><NameOfSubstance>Tin</NameOfSubstance></Chemical><Chemical><RegistryNumber>AD84R52XLF</RegistryNumber><NameOfSubstance>Thallium</NameOfSubstance></Chemical><Chemical><RegistryNumber>H6241UJ22B</RegistryNumber><NameOfSubstance>Selenium</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Alloys</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Crystallization</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Electrons</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Photoelectron Spectroscopy</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Selenium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Temperature</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Thallium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Tin</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2013</Year><Month>4</Month><Day>4</Day></PubMedPubDate><PubMedPubDate PubStatus="epublish"><Year>2013</Year><Month>4</Month><Day>17</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2013</Year><Month>4</Month><Day>5</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2013</Year><Month>4</Month><Day>5</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2013</Year><Month>10</Month><Day>18</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1039/c3cp50836f</ArticleId><ArticleId IdType="pubmed">23552559</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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